Abstract: Vitrified bond diamond grinding wheels by microwave sintering has high preparation efficiency and good mechanical properties. In order to study its grinding performance of silicon wafer, a series of experiments of grinding silicon wafer with grinding wheel segments were carried out on constant pressure plane grinding device. The surface roughness, surface topography of silicon wafer, and grinding ratio of grinding wheel segments was studied by different grinding processes (radial pressure, grinding speed and grinding time). The experiment show that when the grinding pressure is 22 N, the speed is 450 mm/s and the grinding time is 1 h, the minimum surface roughness of silicon wafer is 0.41 μm, and the grinding ratio of grinding wheel is 0.17, and vitrified bond diamond grinding wheels by microwave can meet the requirements of the surface quality of silicon wafer.