Abstract: Ultra-precision thinning and grinding is one of the key processes in semiconductor silicon wafer manufacture. However, subsurface cracks, residual stresses and microstructural lattice distortions are the main damage defects generated by thinning grinding. Through the thinning grinding of silicon wafers, the distributions of effective strain and residual stress were studied to evaluate the grinding damage. Firstly, the molecular dynamics simulation models of grinding silicon wafers with spherical and trigonal single-grain diamonds were established respectively. The process parameters of the silicon wafer rotational speed, grinding wheel rotational speed, and removing volume were selected to simulate the grinding by the Lammps software. Secondly, the strain and equivalent strain distribution data on the surface of the silicon wafer were obtained. The value of relative displacement of atoms deformed on the silicon lattice during grinding was taken as the damage evaluation object, and the damage value was calculated. On this basis, the size of 10 mm×10 mm×0.3 mm samples were taken at seven positions on the ϕ300 mm silicon wafer after grinding, and Roman spectrometer was employed to test and obtain the average residual stress at the sample points. Further, the distribution of strain, equivalent strain and residual stress in X, Y and Z direction at different positions were attained by investigating of the simulation and experimental test of the grinding. The results demonstrate that the equivalent strain values on the surface of silicon wafer differed by 8.1%, and the residual stress values differed by 9%. Finally, it shows that the equivalent strain and residual stress of the grinding are uniformly distribution, and the process parameters are reasonable and feasible, which can provide theoretical basis for the ultra-precision and high-efficiency thinning grinding processing of silicon wafers.