磨粒自身磨损及工艺参数对碳化硅陶瓷磨削损伤的影响规律研究

Study on the influence of abrasive self-wear and process parameters on grinding damage of silicon carbide ceramics

  • 摘要: 为研究磨粒自身磨损及磨削工艺参数对碳化硅陶瓷磨削加工表面损伤的影响,建立维诺多晶碳化硅陶瓷模型,进行单磨粒刮擦仿真模拟。通过将特定仿真结果与实验刮擦进行验证,证明了模型的正确性。仿真结果表明,磨损磨粒相比于未磨损磨粒在磨削过程中会产生更多裂纹,且磨粒磨损程度越加剧,磨削时裂纹产生越多;磨削深度相比于磨削速度对多晶碳化硅陶瓷磨削损伤的影响最为强烈,多晶碳化硅陶瓷的延性域磨削深度约为0.16 μm。

     

    Abstract: To study the influence of abrasive self-wear and grinding process parameters on the surface damage of silicon carbide ceramic grinding, a Voronoi polycrystalline silicon carbide ceramic model was established, and a single abrasive scratch simulation was carried out. The correctness of the model was proved by verifying the specific simulation results with experimental scraping. The simulation results show that the worn abrasive grains generate more cracks during the grinding process compared with the unworn abrasive grains, and the more severe the wear degree of the abrasive grains, the more cracks will be generated during grinding. The grinding depth has the strongest influence on the grinding damage of polycrystalline silicon carbide ceramics compared to the grinding speed. The grinding depth in the ductile domain of polycrystalline silicon carbide ceramics is approximately 0.16 μm.

     

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