The simulation and experimental study of the shell structure on laser output power
-
摘要: 半导体激光器作为一种精密仪器,壳体结构对激光器工作时输出功率的稳定性至关重要。基于 ANSYS Workbench 软件对壳体进行有限元分析,得到壳体前8阶固有特征频率和相应振型,发现壳体薄弱环节。结合实验验证光路模块安装在壳体薄弱环节与非薄弱环节下,对半导体激光器输出功率的影响。仿真结果表明:壳体振型主要表现为整体与局部变形,薄弱环节主要分布在壳体几何中心位置处。实验结果表明:通过比较壳体不同位置下的实际输出功率,发现壳体薄弱处输出功率最大误差为10%,非薄弱处最大为4%。为后期优化半导体激光器的结构设计与提高其输出功率的稳定性提供参考。Abstract: As a precision instrument, the shell structure of the semiconductor laser is crucial to the stability of the laser’s output power. Based on the finite element analysis of the shell with the software ANSYS Workbench, the first 8 natural characteristic frequencies and corresponding vibration modes of the shell have been obtained, and the weak links of the shell have been found. The experiment verifies the effect of the optical path module installed in the weak and non-weak parts of the shell on the output power of the semiconductor laser. The simulation results show that the vibration mode of the shell is characterized by global and local deformation, and the weak links are mainly located at the geometric center of the shell. The experimental results show that the maximum error of the output power is 10% in the weak part while 4% in the non-weak part by comparing the actual output power under different positions of the shell. It provides a reference for optimizing the structure design of the semiconductor laser and improving the stability of its output power.
-
Key words:
- semiconductor laser shell /
- modal analysis /
- natural frequency /
- output power
-
表 1 半导体激光器材料参数
材料 杨氏
模量/GPa泊松比 剪切
模量/GPa体积
模量/GPa密度/(kg·m−3) 结构钢 200 0.3 76.92 166.7 7850 表 2 壳体前8阶模态频率
振型阶数 1 2 3 4 5 6 7 8 频率/Hz 113.33 201.72 213.29 232.22 265.93 333.99 361.75 379.91 表 3 光路模块不同安装位置输出功率测试
面板设置
功率/W实际工作
电流/A位置1实际
输出功率/W误差 位置2实际
输出功率/W误差/(%) 5 1.81 4.8 4.0% 4.5 10.0 10 2.70 10.0 0 9.7 3.0 15 3.54 14.5 3.3% 13.9 7.3 20 4.32 19.6 2.0% 18.8 6.0 25 5.08 24.4 2.4% 23.7 5.2 30 5.83 29.5 1.7% 28.8 4.0 35 6.61 34.2 2.3% 33.7 3.7 40 7.42 39.6 1.0% 38.6 3.5 -
[1] 常坤. 半导体激光器的最新进展及应用现状[J]. 电子技术与软件工程, 2018(10): 90. [2] 丘焕然, 刘偲嘉, 甘育娇, 等. 半导体脉冲激光器发展综述[J]. 光通信技术, 2021, 45(10): 1-6. doi: 10.13921/j.cnki.issn1002-5561.2021.10.001 [3] 薛利, 吴重庆, 王健. 偏振、波长与输出功率高稳定半导体激光器的设计与制作[J]. 光学与光电技术, 2019, 17(5): 86-90. doi: 10.19519/j.cnki.1672-3392.2019.05.015 [4] 曹瑞明. 半导体激光器功率稳定性的研究[D]. 哈尔滨: 哈尔滨理工大学, 2008. [5] 范桂东. 半导体激光器功率控制系统的研究[D]. 西安: 西安理工大学, 2016. [6] Xue V W, Yin I X, Niu J Y, et al. Power output of two semiconductor lasers: an observational study[C]. Photonics. MDPI, 2022, 9(4): 219. [7] Huang R K, Chann B, Missaggia L J, et al. High-power coherent beam combination of semiconductor laser arrays[C]. Conference on Lasers and Electro-Optics. Optical Society of America, 2008: CMN1. [8] Avrutin E, Ryvkin B. Carrier accumulation in the optical confinement layer, its effect on power limit in high power and brightness laser diodes, and laser design to overcome this limitation[C]. 2012 IEEE Photonics Society Summer Topical Meeting Series. IEEE, 2012: 53-54. [9] Avrutin E A, Ryvkin B S. Theory of direct and indirect effect of two-photon absorption on nonlinear optical losses in high power semiconductor lasers[J]. Semiconductor Science and Technology, 2016, 32(1): 015004. [10] Klehr A, Wünsche H J, Liero A, et al. Electro-optical characteristics of 808 nm ridge-waveguide lasers operated with high-current nanosecond pulses[J]. Semiconductor Science and Technology, 2017, 32(4): 045016. doi: 10.1088/1361-6641/aa6312 [11] Hao T, Song J, Leisher P O. Rate equation analysis of longitudinal spatial hole burning in high-power semiconductor lasers[C]//Semiconductor Lasers and Laser Dynamics VI. International Society for Optics and Photonics, 2014, 9134: 91340S. [12] Ryvkin B S, Avrutin E A, Kostamovaara J T. Strong doping of the n-optical confinement layer for increasing output power of high-power pulsed laser diodes in the eye safe wavelength range[J]. Semiconductor Science and Technology, 2017, 32(12): 125008. doi: 10.1088/1361-6641/aa92fd [13] Ryvkin B S, Avrutin E A, Kostamovaara J T. Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by high doping of the n-waveguide[J]. Semiconductor Science and Technology, 2018, 33(10): 105010. doi: 10.1088/1361-6641/aadfb8 [14] 何培文. 环境温度对半导体激光器输出功率的影响[J]. 科技视界, 2016(7): 171. doi: 10.3969/j.issn.2095-2457.2016.07.120 [15] 王鑫, 朱凌妮, 赵懿昊, 等. 915nm半导体激光器新型腔面钝化工艺[J]. 红外与激光工程, 2019, 48(1): 77-81. [16] 杨彬, 赵琦, 周军, 等. 激光器安装板结构稳定性分析[J]. 激光与光电子学进展, 2015, 52(9): 229-234. [17] 马新强, 成巍, 任远, 等. 基于ANSYS Workbench的激光器壳体结构优化设计[J]. 制造技术与机床, 2020(1): 30-33. [18] 黄佳瑶, 尚林, 马淑芳, 等. 半导体激光器输出功率影响因素的研究进展[J]. 中国材料进展, 2021, 40(3): 218-224. doi: 10.7502/j.issn.1674-3962.201908013 [19] 江民圣. ANSYS Workbench 19.0基础入门与工程实践[M]. 北京: 人民邮电出版社, 2019. [20] 王东升, 陈新记, 申东亮. 基于ANSYS Workbench的齿轮箱箱体模态及振动响应分析[J]. 煤矿机械, 2020, 41(7): 69-72. [21] 范晋伟, 李相智, 唐宇航, 等. 基于ANSYS Workbench的凸轮轴磨床垫板的动态性能分析[J]. 制造技术与机床, 2017(12): 107-111.